IPI80CN10NG
1.02MB
Power-transistor.
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IPI80CN10N - Power Transistor
(Infineon)
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IPI80CN10N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI80CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.08Ω ·Enhancement mode ·Fa.
IPI80N03S4L-03 - Power-Transistor
(Infineon)
IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max (SMD version) ID 30 2.4 80 PG-TO262-3-1.
IPI80N03S4L-04 - Power-Transistor
(Infineon)
IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max (SMD version) ID 30 3.4 80 V mΩ A
Feat.
IPI80N04S2-04 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating.
IPI80N04S2-H4 - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.
IPI80N04S3-03 - Power-Transistor
(Infineon Technologies)
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
IPI80N04S3-06 - Power-Transistor
(Infineon Technologies)
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
IPI80N04S4-03 - Power-Transistor
(Infineon)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
IPI80N04S4-04 - Power-Transistor
(Infineon)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
