IPN60R600P7S Datasheet - Infineon

IPN60R600P7S Power-Transistor

IPN60R600P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.The 600V CoolMOS™ P7 series combines the experience of the leading SJMOSFET supplier with high class innovation, and is the only platform that enables an RDS(on) A below 1Ohm mm².The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 .

IPN60R600P7S Features

* Suitable for hard and soft switching (PFC and LLC)

* Integrated Gate Resistor to enable excellent balance between efficiency and ease of use

* RDS(on)

* A below 1Ohm

* mm², enables low RDSON/package

* ESD diode from 180mOhms and above

* Ser

IPN60R600P7S-Infineon.pdf