IPT047N15NM6 Datasheet - Infineon

IPT047N15NM6, 150V MOSFET

Public IPT047N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V .
1 Maxi.

Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21
* MSL 1 classified according to J‑STD‑020 Product

Applications

* Table 1 Key performance parameters Parameter Value Unit VDS 150 V RDS(on),max 4.7 mΩ ID 147 A Qoss 153 nC QG 51 nC Qrr (500A/μs) 145 nC Type / Ordering code IPT047N15NM6 Package PG‑HSOF‑8 TOLL tab 12 34 5 678 87654 321 Drain Tab Gate Pin 1 Source Pin 2-8 Marking 047N15

IPT047N15NM6-Infineon.pdf