IPT004N03L MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 30 V IPT004N03L Data Sheet Rev.2.0 Final Power Management .
Features. Optimized for e-fuse and ORing application. Very low on-resistance RDS(on) @ VGS=4. 100% avalanche tested.

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Datasheet Specifications

Part number: IPT004N03L
Manufacturer: Infineon ↗
File Size: 1.06 MB
Datasheet: IPT004N03L-Infineon.pdf
Description: MOSFET

Applications

* Pb-free lead plating; RoHS compliant Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max 0.4 mΩ ID 300 A QOSS 141 nC QG(0V. .10V) 252 nC OptiMOSTM Power-MOSFET, 30 V IPT004N03L HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type /

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