Datasheet Details
- Part number
- IPT007N06N
- Manufacturer
- Infineon ↗
- File Size
- 639.43 KB
- Datasheet
- IPT007N06N-Infineon.pdf
- Description
- MOSFET
IPT007N06N Description
IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V .
IPT007N06N Features
* 100% avalanche tested
* Superior thermal resistance
* N-channel
IPT007N06N Applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
Product validation
Qualified according to JEDEC Standard
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
0.75
mΩ
ID 486 A
Qoss 227 nC
QG(0V. .10V)
216
nC
H
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