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IPT111N20NFD MOSFET

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Description

IPT111N20NFD MOSFET OptiMOSª3 Power-Transistor, 200 V .

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Features

* N-channel, normal level
* Fast Diode (FD) with reduced Qrr
* Optimized for hard commutation ruggedness
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo

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