* Suitable for hard and soft switching (PFC and high performance LLC)
* Increased MOSFET dv/dt ruggedness to 120V/ns
* Increased efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Qualified for industrial
IPW60R040C7 Datasheet (1.51 MB)
IPW60R040C7
1.51 MB
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Metal Oxide Semiconductor Field Effect Transistor
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