* Increased MOSFET dv/dt ruggedness
* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound
* Qualified for industrial grade applications acco
IPW60R041P6 Datasheet (1.83 MB)
IPW60R041P6
1.83 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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Data Sheet
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