IRFIZ44N Datasheet - Infineon

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IRFIZ44N Power MOSFET

* Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to Lead Creepage Dist.= 4.8mm * Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

IRFIZ44N-Infineon.pdf

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Datasheet Details

Part number:

IRFIZ44N

Manufacturer:

Infineon ↗

File Size:

502.97 KB

Description:

Power MOSFET

Applications

* The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mi

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IRFIZ44N Power MOSFET Infineon

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