Datasheet4U Logo Datasheet4U.com

IRFIZ44N Power MOSFET

📥 Download Datasheet  Datasheet Preview Page 1

Description

* Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to Lead Creepage Dist.= 4.8mm * Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

📥 Download Datasheet

Preview of IRFIZ44N PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mi

IRFIZ44N Distributors

📁 Related Datasheet

📌 All Tags

Infineon IRFIZ44N-like datasheet