Datasheet Details
- Part number
- IRFIZ44N
- Manufacturer
- Infineon ↗
- File Size
- 502.97 KB
- Datasheet
- IRFIZ44N-Infineon.pdf
- Description
- Power MOSFET
IRFIZ44N Description
* Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS * Sink to Lead Creepage Dist.= 4.8mm * Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
IRFIZ44N Applications
* The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mi
📁 Related Datasheet
📌 All Tags