IRFI1310NPBF Datasheet - Infineon

IRFI1310NPBF, Power MOSFET

* Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to Lead Creepage Dist.= 4.8mm * Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

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Datasheet Details

Part number:

IRFI1310NPBF

Manufacturer:

Infineon ↗

File Size:

1.81 MB

Description:

Power MOSFET

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica

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IRFI1310NPBF Power MOSFET Infineon

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