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IRFI1310NPBF - Power MOSFET

IRFI1310NPBF Description

* Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to Lead Creepage Dist.= 4.8mm * Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

IRFI1310NPBF Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica

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