IRFI3205 Datasheet - International Rectifier

Power MOSFET

IRFI3205 Features

* 1 - GA TE 2 - D R AIN 3 - SO U RC E NO TE S: 1 D IM EN SIO N IN G & T OLER AN C ING PE R A NS I Y14.5M , 1982 1 2 3 2 C ON T R OLLIN G D IM EN SION : IN C H. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C A D 16.00 (.630) 15.80 (.622) 1.15 (.045) M IN. 1.40 (.055) 3X 1.05 (.042) 2.54 (.10

IRFI3205 General Description

l l D VDSS = 55V G S RDS(on) = 0.008Ω ID = 64A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power.

IRFI3205 Datasheet (107.56 KB)

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Datasheet Details

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IRFI3205

Manufacturer:

International Rectifier

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107.56 KB

Description:

Power mosfet.
PD - 9.1374B IRFI3205 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS.

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IRFI3205 Power MOSFET International Rectifier

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IRFI3205 Features

IRFI3205 General Description

Datasheet Details

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