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IRFI1010N - N-Channel MOSFET

IRFI1010N Description

Isc N-Channel MOSFET Transistor *.

IRFI1010N Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRFI1010N Applications

* Switching applications INCHANGE Semiconductor IRFI1010N
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 49 35 290 PD T

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Datasheet Details

Part number
IRFI1010N
Manufacturer
INCHANGE
File Size
196.89 KB
Datasheet
IRFI1010N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRFI1010N-like datasheet