IRFI1010NPBF Datasheet - International Rectifier

IRFI1010NPBF, Power MOSFET

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.= 4.8mm l Fully Avalanche Rated l.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

datasheet Preview Page 1 from Datasheet4u.com

IRFI1010NPBF-InternationalRectifier.pdf

IRFI1010NPBF Datasheet Preview — Preview of IRFI1010NPBF PDF

Datasheet Details

Part number:

IRFI1010NPBF

Manufacturer:

International Rectifier

File Size:

226.70 KB

Description:

Power MOSFET

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

IRFI1010NPBF Distributors

📁 Related Datasheet

IRFI1310NPBF IRFI3205 IRFI3205PbF IRFI3306G IRFI4110G IRFI4110GPbF

📌 All Tags

IRFI1010NPBF Power MOSFET International Rectifier

International Rectifier IRFI1010NPBF-like datasheet