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IRFI3306G N-Channel MOSFET

IRFI3306G Description

Isc N-Channel MOSFET Transistor *.

IRFI3306G Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRFI3306G Applications

* Switching applications INCHANGE Semiconductor IRFI3306G
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 71 50 300 PD T

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Datasheet Details

Part number
IRFI3306G
Manufacturer
INCHANGE
File Size
196.56 KB
Datasheet
IRFI3306G-INCHANGE.pdf
Description
N-Channel MOSFET

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INCHANGE IRFI3306G-like datasheet