IRFI3306GPBF Datasheet - International Rectifier

IRFI3306GPBF Power MOSFET

IRFI3306GPbF VDSS RDS(on) typ. max. ID D Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Halogen-Free 60V 3.3m 4.2m 71A D G G S D S TO-220 Full-Pa.

IRFI3306GPBF Features

* own in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed

IRFI3306GPBF-InternationalRectifier.pdf