Datasheet Details
- Part number
- IRFI1310N
- Manufacturer
- INCHANGE
- File Size
- 218.31 KB
- Datasheet
- IRFI1310N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRFI1310N Description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFI1310N *.
IRFI1310N Features
* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IRFI1310N Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
24 17
A
IDM
Drain Current-Single Pulsed
140
A
PD
Total Dissip
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