Datasheet Specifications
- Part number
- IRFI260
- Manufacturer
- International Rectifier
- File Size
- 135.18 KB
- Datasheet
- IRFI260_InternationalRectifier.pdf
- Description
- N-Channel Power MOSFET
Description
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.PD 9.809 HEXFET® TRANSISTOR 200 Volt, 0.060Ω, HEXFET HEXFET technology is the k.
Features
* n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain CApplications
* such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the devIRFI260 Distributors
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