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IRFI3205PbF Datasheet - Infineon

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IRFI3205PbF Power MOSFET

  * Advanced Process Technology * Ultra Low On-Resistance * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to Lead .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

IRFI3205PbF-Infineon.pdf

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Datasheet Details

Part number:

IRFI3205PbF

Manufacturer:

Infineon ↗

File Size:

488.48 KB

Description:

Power MOSFET

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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