IRFI3710 Datasheet - International Rectifier

Power MOSFET

IRFI3710 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer.

IRFI3710 Datasheet (150.19 KB)

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Part number:

IRFI3710

Manufacturer:

International Rectifier

File Size:

150.19 KB

Description:

Power mosfet.
PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully .

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IRFI3710 Power MOSFET International Rectifier

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IRFI3710 General Description

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