Datasheet4U Logo Datasheet4U.com

IRFI3205PBF Power MOSFET

📥 Download Datasheet  Datasheet Preview Page 1

Description

l Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist.= 4.8mm.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Preview of IRFI3205PBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

IRFI3205PBF Distributors

📁 Related Datasheet

📌 All Tags

International Rectifier IRFI3205PBF-like datasheet