IRFI1010, International Rectifier
PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead .
IRFI1010N, International Rectifier
PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead .
IRFI1010NPBF, International Rectifier
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l.
IRFI1310G, International Rectifier
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PD - 9.1222
IRFI1310G
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Isolated P.
IRFI1310N, International Rectifier
PD - 9.1611A
PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l F.
