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IRFI1010N Datasheet - International Rectifier

Power MOSFET

IRFI1010N Features

* 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 2 C O N T R OLL IN G D IM EN SION : IN C H . 3.30 (.130) 3.10 (.122) -B 13 .7 0 (.540) 13 .5 0 (.530) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .5 4 (.100) 2X 0.90 (.035 ) 3X 0.70 (.028 ) 0.25 (.010) M A M B 3X 0.48 (.019 ) 0.44 (.017

IRFI1010N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFI1010N Datasheet (109.12 KB)

Preview of IRFI1010N PDF

Datasheet Details

Part number:

IRFI1010N

Manufacturer:

International Rectifier

File Size:

109.12 KB

Description:

Power mosfet.
PD - 9.1373A IRFI1010N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead .

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Stock and price

Distributor
Infineon Technologies AG
IRFI1010NPBF
0 In Stock
Unit Price : $0

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IRFI1010N Power MOSFET International Rectifier

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