IRFI1010N Datasheet - International Rectifier

IRFI1010N, Power MOSFET

PD - 9.1373A IRFI1010N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Details

Part number:

IRFI1010N

Manufacturer:

International Rectifier

File Size:

109.12 KB

Description:

Power MOSFET

Features

* 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 2 C O N T R OLL IN G D IM EN SION : IN C H . 3.30 (.130) 3.10 (.122) -B 13 .7 0 (.540) 13 .5 0 (.530) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .5 4 (.100) 2X 0.90 (.035 ) 3X 0.70 (.028 ) 0.25 (.010) M A M B 3X 0.48 (.019 ) 0.44 (.017

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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