IRFI1310G Datasheet - International Rectifier

IRFI1310G Power MOSFET

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de.

IRFI1310G Features

* IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. To Order

IRFI1310G_InternationalRectifier.pdf