IRFI1310G Datasheet - International Rectifier

IRFI1310G, Power MOSFET

Previous Datasheet Index Next Data Sheet PD - 9.1222 IRFI1310G HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated P.
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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IRFI1310G_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFI1310G

Manufacturer:

International Rectifier

File Size:

361.48 KB

Description:

Power MOSFET

Features

* IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. To Order

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

IRFI1310G Distributors

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IRFI1310G Power MOSFET International Rectifier

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