IRFI1310N Datasheet - International Rectifier

IRFI1310N Power MOSFET

l l IRFI1310N HEXFET® Power MOSFET D VDSS = 100V G S RDS(on) = 0.036Ω ID = 24A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.

IRFI1310N Features

* .54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189) Part Marking Information TO-220 Fullpak E X AE MX PA LM EP: L E TH N AIR 1 0F 1I8 0 40G : IS T HIS IS

IRFI1310N_InternationalRectifier.pdf