IRFIZ44NPbF, IRFIZ44N Power MOSFET

Infineon

Description

* Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to Lead Creepage Dist.= 4.8mm * Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

📥 Download Datasheet

IRFIZ44NPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFIZ44NPbF, IRFIZ44N. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRFIZ44NPbF, IRFIZ44N
Manufacturer: Infineon ↗
File Size: 502.97 KB
Datasheet: IRFIZ44N-Infineon.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IRFIZ44NPbF, IRFIZ44N.
Please refer to the document for exact specifications by model.

Applications

* The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mi

IRFIZ44NPbF Distributors

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IRFIZ44N Power MOSFET Infineon

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