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IRFIZ44NPbF Datasheet - Infineon

Power MOSFET

IRFIZ44NPbF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer w.

IRFIZ44NPbF Datasheet (502.97 KB)

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Datasheet Details

Part number:

IRFIZ44NPbF

Manufacturer:

Infineon ↗

File Size:

502.97 KB

Description:

Power mosfet.
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS  Sink to Lead Creepage Dist. = 4.8mm Ful.

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IRFIZ44NPbF Power MOSFET Infineon

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