Datasheet Details
- Part number
- IRFIZ44N
- Manufacturer
- International Rectifier
- File Size
- 244.23 KB
- Datasheet
- IRFIZ44N_InternationalRectifier.pdf
- Description
- Power MOSFET
IRFIZ44N Description
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist.= 4.8mm l Fully Avalanche Rated .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFIZ44N Applications
* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi
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