IRFIZ14G Datasheet - Vishay Siliconix

IRFIZ14G Power MOSFET

G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-ind.

IRFIZ14G Features

* 60 0.20

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* 175 °C Operating Temperature

* Dynamic dv/dt Rating

* Low Thermal Resistance

* Compliant to RoHS Directive 2002/9

IRFIZ14G_VishaySiliconix.pdf