IRFIZ14G Power MOSFET

Vishay Siliconix

Description

www.DataSheet.co.kr IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.
G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedize.

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Datasheet Specifications

Part number: IRFIZ14G
Manufacturer: Vishay ↗ Siliconix
File Size: 1.04 MB
Datasheet: IRFIZ14G_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 60 0.20
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* 175 °C Operating Temperature
* Dynamic dv/dt Rating
* Low Thermal Resistance
* Compliant to RoHS Directive 2002/9

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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IRFIZ14G Power MOSFET Vishay Siliconix

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