IRFIZ14A - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRFW/IZ14A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.
IRFIZ14G - HEXFET Power MOSFET
(International Rectifier)
.DataSheet.co.kr
Datasheet pdf - http://..net/
.DataSheet.co.kr
Datasheet pdf - http://..net/
.DataSheet.co.k.
IRFIZ24A - Power MOSFET
(Samsung)
Advanced Power MOSFET
IRFW/IZ24A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte.
IRFIZ24E - Power MOSFET
(International Rectifier)
PD - 9.1673A
IRFIZ24E
HEXFET® Power MOSFET
Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage.
IRFIZ24EPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95594
IRFIZ24EPbF
Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l F.
IRFIZ24G - HEXFET Power MOSFET
(International Rectifier)
.