Part number:
IRFIZ24A
Manufacturer:
Samsung
File Size:
208.25 KB
Description:
Power mosfet.
Datasheet Details
IRFIZ24A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR
Datasheet Details
IRFIZ24A
Samsung
208.25 KB
Power mosfet.
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