IRFIZ24A - Power MOSFET

Product Overview

Samsung

Part number	IRFIZ24A
Manufacturer	Samsung
File Size	208.25 KB
Description	Power MOSFET
Datasheet	IRFIZ24A Datasheet
Additional preview pages of the IRFIZ24A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Puls.

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Published: Aug 4, 2016 |