Datasheet4U Logo Datasheet4U.com

IRFIZ24A - Power MOSFET

IRFIZ24A Description

Advanced Power MOSFET IRFW/IZ24A .

IRFIZ24A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR

📥 Download Datasheet

Preview of IRFIZ24A PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRFIZ24A
Manufacturer
Samsung
File Size
208.25 KB
Datasheet
IRFIZ24A-Samsung.pdf
Description
Power MOSFET

📁 Related Datasheet

  • IRFIZ24E - Power MOSFET (International Rectifier)
  • IRFIZ24EPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFIZ24G - HEXFET Power MOSFET (International Rectifier)
  • IRFIZ24GP - N-Channel 60V MOSFET (VBsemi)
  • IRFIZ24GPbF - Power MOSFET (Vishay)
  • IRFIZ24N - Power MOSFET (International Rectifier)
  • IRFIZ24NPBF - Power MOSFET (International Rectifier)
  • IRFIZ24V - Power MOSFET (International Rectifier)

📌 All Tags

Power MOSFET Samsung
Samsung IRFIZ24A-like datasheet