Part number:
IRFIZ24A
Manufacturer:
Samsung
File Size:
208.25 KB
Description:
Power mosfet.
IRFIZ24A Datasheet (208.25 KB)
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR
IRFIZ24A Datasheet (208.25 KB)
IRFIZ24A
Samsung
208.25 KB
Power mosfet.
📁 Related Datasheet
IRFIZ24E Power MOSFET (International Rectifier)
IRFIZ24EPBF HEXFET Power MOSFET (International Rectifier)
IRFIZ24G HEXFET Power MOSFET (International Rectifier)
IRFIZ24G N-Channel MOSFET (INCHANGE)
IRFIZ24G Power MOSFET (Vishay)
IRFIZ24N Power MOSFET (International Rectifier)
IRFIZ24N N-Channel MOSFET (INCHANGE)
IRFIZ24NPBF Power MOSFET (International Rectifier)
IRFIZ24V Power MOSFET (International Rectifier)
IRFIZ14A Power MOSFET (Fairchild Semiconductor)
