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IRFIZ24V Datasheet - International Rectifier

Power MOSFET

IRFIZ24V Features

* D R A IN 3 - S O U RC E 7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5) M IN. 1 2 3 NO T E S : 1 D IME N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N TR O L L ING D IM E N S IO N: IN C H . 3.3 0 (.13 0 ) 3.1 0 (.12 2 ) -B 1

IRFIZ24V General Description

l l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.060Ω G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

IRFIZ24V Datasheet (83.86 KB)

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Datasheet Details

Part number:

IRFIZ24V

Manufacturer:

International Rectifier

File Size:

83.86 KB

Description:

Power mosfet.
PD - 94102 IRFIZ24V Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully.

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IRFIZ24V Power MOSFET International Rectifier

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