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IRFIZ24EPBF Datasheet - International Rectifier

HEXFET Power MOSFET

IRFIZ24EPBF General Description

l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.071Ω G S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HE.

IRFIZ24EPBF Datasheet (224.64 KB)

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IRFIZ24EPBF

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International Rectifier

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224.64 KB

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Hexfet power mosfet.
PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l F.

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IRFIZ24EPBF HEXFET Power MOSFET International Rectifier

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IRFIZ24EPBF General Description

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