IRFIZ24GPbF Description
www.vishay.com IRFIZ24G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 VGS =.
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.
IRFIZ24GPbF Features
* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* 175 °C operating temperature
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of
IRFIZ24GPbF Applications
* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc
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