Datasheet Details
- Part number
- IRFI520G
- Manufacturer
- Vishay ↗
- File Size
- 1.60 MB
- Datasheet
- IRFI520G-Vishay.pdf
- Description
- Power MOSFET
IRFI520G Description
Power MOSFET IRFI520G, SiHFI520G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
IRFI520G Features
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* 175 °C Operating Temperature
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available
Available
RoHS
IRFI520G Applications
* The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single s
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