IRFIZ24NPBF Datasheet - International Rectifier

Power MOSFET

IRFIZ24NPBF Features

* e most current drawings please refer to the IR website at: http://www.irf.com/package/

IRFIZ24NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFIZ24NPBF Datasheet (207.23 KB)

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IRFIZ24NPBF

Manufacturer:

International Rectifier

File Size:

207.23 KB

Description:

Power mosfet.
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Des.

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IRFIZ24NPBF Power MOSFET International Rectifier

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IRFIZ24NPBF Features

IRFIZ24NPBF General Description

Datasheet Details

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