IRFIZ24NPBF Datasheet - International Rectifier

IRFIZ24NPBF, Power MOSFET

Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Fully Avalanche Rated Lead-Free Des.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFIZ24NPBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFIZ24NPBF

Manufacturer:

International Rectifier

File Size:

207.23 KB

Description:

Power MOSFET

Features

* e most current drawings please refer to the IR website at: http://www. irf. com/package/

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

IRFIZ24NPBF Distributors

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IRFIZ24NPBF Power MOSFET International Rectifier

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