IRFIZ24E Datasheet - International Rectifier

Power MOSFET

IRFIZ24E Features

* N . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 3X 1.40 (.05 5) 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M A M B 3X 0.48 (.019) 0.44 (

IRFIZ24E General Description

l l D VDSS = 60V G S RDS(on) = 0.071Ω ID = 14A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power.

IRFIZ24E Datasheet (114.75 KB)

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IRFIZ24E

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International Rectifier

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114.75 KB

Description:

Power mosfet.
PD - 9.1673A IRFIZ24E HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage.

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IRFIZ24E Power MOSFET International Rectifier

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IRFIZ24E Features

IRFIZ24E General Description

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