IRFIZ46N Datasheet - International Rectifier

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IRFIZ46N Power MOSFET

PD - 9.1306A IRFIZ46N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead C.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRFIZ46N_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFIZ46N

Manufacturer:

International Rectifier

File Size:

104.92 KB

Description:

Power MOSFET

Features

* 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 16 .0 0 (.630) 15 .8 0 (.622) 1.15 (.04 5) M IN . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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IRFIZ46N Power MOSFET International Rectifier

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