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IRLR2705PbF Power MOSFET

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Description

IRLR2705PbF .
Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

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Features

* Logic-Level Gate Drive
* Ultra Low On-Resistance
* Advanced Process Technology
* Fast Switching
* Fully Avalanche Rated

Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.040 28A
* D G Gate S G D- Pak IRLR2705PbF D Drain

IRLR2705PbF Distributors

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