Description
IRLR3410PbF IRLU3410PbF .
Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
* Logic Level Gate Drive
* Ultra Low On-Resistance
* Surface Mount (IRLR3410)
* Straight Lead (IRLU3410)
* Advances Process Technology
* Fast Switching
* Fully Avalanche Rated
Applications
* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET
