* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note
IRLR3410TRPBF Datasheet (513.56 KB)
IRLR3410TRPBF
VBsemi
513.56 KB
N-channel mosfet.
IRLR3410TRPBF IRLR3410TRPBF Datasheet
www.VBsemi.com
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.114 at VGS = 10 V
ID.
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