Datasheet Details
- Part number
- IRLR3410TRPBF
- Manufacturer
- VBsemi
- File Size
- 513.56 KB
- Datasheet
- IRLR3410TRPBF-VBsemi.pdf
- Description
- N-Channel MOSFET
IRLR3410TRPBF Description
IRLR3410TRPBF IRLR3410TRPBF Datasheet www.VBsemi.com N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID.
IRLR3410TRPBF Features
* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
IRLR3410TRPBF Applications
* Primary Side Switch
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous S
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