IRLR3103PbF Datasheet, Mosfet, International Rectifier

IRLR3103PbF Features

• Mosfet 400 300 RG 10V D.U.T IAS tp + V - DD A 200 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 100 0 VDD = 15V 25 50 75 100 125 150 175 A V(BR)DSS tp Starting TJ , Junction

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IRLR3103PbF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. l HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.019Ω G S ID = 55A… Fifth Generation HEXFETs from International Rectifier utilize

IRLR3103PbF Application

• Applications The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU

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IRLR3103PbF

International Rectifier

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