* ions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H A SS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY
IRLR3103PbF Datasheet (378.98 KB)
IRLR3103PbF
International Rectifier
378.98 KB
Power mosfet.
PD - 95085A
IRLR/U3103PbF
Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process T.
📁 Related Datasheet
IRLR3103 - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR3103)
l Straight Lead (IRLU3103)
l Advanced Process Technology
G
l Fast .
IRLR3103 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3103, IIRLR3103
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤19mΩ ·Enhancement mode: ·100% avalanche te.
IRLR3105 - HEXFET Power MOSFET
(International Rectifier)
PD - 94510B
AUTOMOTIVE MOSFET
IRLR3105
IRLU3105
HEXFET® Power MOSFET
Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low .
IRLR3105 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3105, IIRLR3105
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤37mΩ ·Enhancement mode: ·100% avalanche te.
IRLR3105PBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95553A
AUTOMOTIVE MOSFET
Features
l l l l l l l
HEXFET Power MOSFET
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance .
IRLR3110Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3110Z, IIRLR3110Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche .
IRLR3110ZPBF - Power MOSFET
(International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.
IRLR3110ZPBF - N-Channel MOSFET
(VBsemi)
IRLR3110ZPBF
.VBsemi.
IRLR3110ZPBF N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = 10 V 100
0.0095 at VGS.
