IRLR3103PbF - Power MOSFET
l HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.019Ω G S ID = 55A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized devi
IRLR3103PbF Features
* ions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H A SS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY
