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IRLR3636 N-Channel MOSFET

IRLR3636 Description

isc N-Channel MOSFET Transistor IRLR3636, IIRLR3636 *.

IRLR3636 Features

* Static drain-source on-resistance: RDS(on)≤6.8mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Speed Power Switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

IRLR3636 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRLR3636
Manufacturer
INCHANGE
File Size
237.90 KB
Datasheet
IRLR3636-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRLR3636-like datasheet