IRLR3105 Datasheet, Mosfet, International Rectifier

IRLR3105 Features

• Mosfet l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G D VDSS = 5

PDF File Details

Part number:

IRLR3105

Manufacturer:

International Rectifier

File Size:

184.61kb

Download:

📄 Datasheet

Description:

Hexfet power mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext

IRLR3105 Application

• Applications this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additiona

TAGS

IRLR3105

International Rectifier

📁 Related Datasheet

IRLR3103 - Power MOSFET (International Rectifier)
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process Technology G l Fast .

IRLR3103 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤19mΩ ·Enhancement mode: ·100% avalanche te.

IRLR3103PbF - Power MOSFET (International Rectifier)
PD - 95085A IRLR/U3103PbF Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process T.

IRLR3105 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤37mΩ ·Enhancement mode: ·100% avalanche te.

IRLR3105PBF - HEXFET Power MOSFET (International Rectifier)
PD - 95553A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance .

IRLR3110Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche .

IRLR3110ZPBF - Power MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.

IRLR3110ZPBF - N-Channel MOSFET (VBsemi)
IRLR3110ZPBF .VBsemi. IRLR3110ZPBF N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0075 at VGS = 10 V 100 0.0095 at VGS.

IRLR3114Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.9mΩ ·Enhancement mode: ·100% avalanche .

IRLR3114ZPbF - Power MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.