Part number:
IRLR3105
Manufacturer:
International Rectifier
File Size:
184.61 KB
Description:
Hexfet power mosfet.
IRLR3105 Datasheet (184.61 KB)
* l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G D VDSS = 55V RDS(on) = 0.037Ω ID = 25A S Description Specifically designed for Automotive applications, this HEXFET® Power M
IRLR3105 Datasheet (184.61 KB)
IRLR3105
International Rectifier
184.61 KB
Hexfet power mosfet.
📁 Related Datasheet
IRLR3103 - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR3103)
l Straight Lead (IRLU3103)
l Advanced Process Technology
G
l Fast .
IRLR3103 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3103, IIRLR3103
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤19mΩ ·Enhancement mode: ·100% avalanche te.
IRLR3103PbF - Power MOSFET
(International Rectifier)
PD - 95085A
IRLR/U3103PbF
Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process T.
IRLR3105 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3105, IIRLR3105
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤37mΩ ·Enhancement mode: ·100% avalanche te.
IRLR3105PBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95553A
AUTOMOTIVE MOSFET
Features
l l l l l l l
HEXFET Power MOSFET
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance .
IRLR3110Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3110Z, IIRLR3110Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche .
IRLR3110ZPBF - Power MOSFET
(International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.
IRLR3110ZPBF - N-Channel MOSFET
(VBsemi)
IRLR3110ZPBF
.VBsemi.
IRLR3110ZPBF N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = 10 V 100
0.0095 at VGS.
