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IRLR3303

Power MOSFET

IRLR3303 Features

* nductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLR/U3303 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5

IRLR3303 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLR3303 Datasheet (165.95 KB)

Preview of IRLR3303 PDF

Datasheet Details

Part number:

IRLR3303

Manufacturer:

International Rectifier

File Size:

165.95 KB

Description:

Power mosfet.
www.DataSheet4U.com PD- 91316F IRLR/U3303 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3303.

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IRLR3303 Power MOSFET International Rectifier

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