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IRLR3114ZPbF Power MOSFET

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Description

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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Applications

* PD - 97284A IRLR3114ZPbF IRLU3114ZPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 4.9mΩ S D-Pak I-Pak IRLR3114ZPbF IRLU3114ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (S

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