IRLR3410PBF Datasheet, Mosfet, International Rectifier

IRLR3410PBF Features

  • Mosfet atasheet pdf - http://www.DataSheet4U.co.kr/ IRLR/U3410PbF EAS , Single Pulse Avalanche Energy (mJ) 350 TOP 300 15V BOTTOM ID 3.7A 6.4A 9.0A 250 VDS L DRIVER 200 RG 10V D.U.

PDF File Details

Part number:

IRLR3410PBF

Manufacturer:

International Rectifier

File Size:

351.96kb

Download:

📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resist

Datasheet Preview: IRLR3410PBF 📥 Download PDF (351.96kb)
Page 2 of IRLR3410PBF Page 3 of IRLR3410PBF

IRLR3410PBF Application

  • Applications The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU

TAGS

IRLR3410PBF
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRLR3410 - HEXFET Power MOSFET (International Rectifier)
.. PD - 91607B IRLR/U3410 HEXFET® Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3410) l Straig.

IRLR3410 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤105mΩ ·Enhancement mode: ·100% avalanche t.

IRLR3410TRPBF - N-Channel MOSFET (VBsemi)
IRLR3410TRPBF IRLR3410TRPBF Datasheet .VBsemi. N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID.

IRLR3103 - Power MOSFET (International Rectifier)
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process Technology G l Fast .

IRLR3103 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤19mΩ ·Enhancement mode: ·100% avalanche te.

IRLR3103PbF - Power MOSFET (International Rectifier)
PD - 95085A IRLR/U3103PbF Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process T.

IRLR3105 - HEXFET Power MOSFET (International Rectifier)
PD - 94510B AUTOMOTIVE MOSFET IRLR3105 IRLU3105 HEXFET® Power MOSFET Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low .

IRLR3105 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤37mΩ ·Enhancement mode: ·100% avalanche te.

IRLR3105PBF - HEXFET Power MOSFET (International Rectifier)
PD - 95553A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance .

IRLR3110Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche .

Stock and price

Infineon Technologies AG
MOSFET N-CH 100V 17A DPAK
DigiKey
IRLR3410PBF
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts