IRLR3410PBF Datasheet - International Rectifier

IRLR3410PBF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLR3410PBF Features

* nt di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ IRLR/U3410PbF D-Pak (TO-252AA)

IRLR3410PBF_InternationalRectifier.pdf