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PTFA260851F, PTFA260851E Thermally-Enhanced High Power RF LDMOS FET

PTFA260851F Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 * 2700 MHz PTFA260851E PTFA260851F Descrip.
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

PTFA260851F Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficie

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA260851F, PTFA260851E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA260851F, PTFA260851E
Manufacturer
Infineon ↗
File Size
387.34 KB
Datasheet
PTFA260851E-Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTFA260851F, PTFA260851E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFA260851F-like datasheet