* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficie
PTFA260851F Datasheet (387.34 KB)
PTFA260851F
387.34 KB
Thermally-enhanced high power rf ldmos fet.
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500
* 2700 MHz
PTFA260851E PTFA260851F
Descrip.
📁 Related Datasheet
PTFA260851E Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA260451E Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA261301E Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA261301F Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA261702E Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601E Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601F Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210701E Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210701F Thermally-Enhanced High Power RF LDMOS FET (Infineon)
