PTFA260451E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 * 2.68 GHz .
The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and WiMAX application.

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Datasheet Specifications

Part number: PTFA260451E
Manufacturer: Infineon ↗
File Size: 215.35 KB
Datasheet: PTFA260451E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* Lead-free, RoHS-compliant and thermallyenhanced packaging
* Internal matching for wideband performance
* Typical three-carrier CDMA2000 performance - Average output power = 10 W - Gain = 14 dB - Efficiency = 24% - ACPR =
* 52 dBc
* Typical CW performance - Ou

Applications

* from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA260451E Package H-30265-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500

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PTFA260451E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA260451E-like datasheet