PTFA260451E Datasheet, Fet, Infineon

PTFA260451E Features

  • Fet
  • Lead-free, RoHS-compliant and thermallyenhanced packaging
  • Internal matching for wideband performance
  • Typical three-carrier CDMA2000 performance - Average o

PDF File Details

Part number:

PTFA260451E

Manufacturer:

Infineon ↗

File Size:

215.35kb

Download:

📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and

Datasheet Preview: PTFA260451E 📥 Download PDF (215.35kb)
Page 2 of PTFA260451E Page 3 of PTFA260451E

PTFA260451E Application

  • Applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full gold metallization ensures excellent d

TAGS

PTFA260451E
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon

📁 Related Datasheet

PTFA260851E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851E PTFA260851F Description The.

PTFA260851F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851E PTFA260851F Description The.

PTFA261301E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally.

PTFA261301F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally.

PTFA261702E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA26170.

PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internall.

PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD.

PTFA210601F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD.

PTFA210701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.

PTFA210701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.

Stock and price

Infineon Technologies AG
RF MOSFET LDMOS 28V H-30265-2
DigiKey
PTFA260451E-V1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts