PTFA261301F - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTFA261301F
Manufacturer	Infineon
File Size	244.71 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA261301F Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFA261301F, PTFA261301E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA261301F datasheet.

The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications.

Thermally-enhanced, Pb-free packages, RoHS-compliant.
Broadband internal matching.
Typical CDMA performance at 2.68 GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24%.
Typical CW performance, 2680 MHz, 28 V - Output power at P.
1dB = 152 W - Efficiency = 47%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).
Excellent thermal stability, low HCI drift.
Capable of handling 10:1 VSWR @ 28 V,.

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Published: Feb 21, 2016 |