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PTFA261301F, PTFA261301E Thermally-Enhanced High Power RF LDMOS FET

PTFA261301F Description

PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 * 2.68 GHz .
The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications.

PTFA261301F Features

* Thermally-enhanced, Pb-free packages, RoHS-compliant
* Broadband internal matching
* Typical CDMA performance at 2.68 GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24%
* Typical CW performance, 2680 MHz, 28 V - Output power at P
* 1dB

PTFA261301F Applications

* They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA261301E Package H-30260-2 Adj. Channel Power Ratio (dBc) Drain Efficiency (%) 3-Carrier CDMA2000 Performanc

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA261301F, PTFA261301E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA261301F, PTFA261301E
Manufacturer
Infineon ↗
File Size
244.71 KB
Datasheet
PTFA261301E-Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTFA261301F, PTFA261301E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFA261301F-like datasheet