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PTFA261301F, PTFA261301E Datasheet - Infineon

PTFA261301F Thermally-Enhanced High Power RF LDMOS FET

The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device li.

PTFA261301F Features

* Thermally-enhanced, Pb-free packages, RoHS-compliant

* Broadband internal matching

* Typical CDMA performance at 2.68 GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24%

* Typical CW performance, 2680 MHz, 28 V - Output power at P

* 1dB

PTFA261301E-Infineon.pdf

This datasheet PDF includes multiple part numbers: PTFA261301F, PTFA261301E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

PTFA261301F, PTFA261301E

Manufacturer:

Infineon ↗

File Size:

244.71 KB

Description:

Thermally-enhanced high power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: PTFA261301F, PTFA261301E.
Please refer to the document for exact specifications by model.

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PTFA261301F PTFA261301E Thermally-Enhanced High Power LDMOS FET Infineon

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