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PTFA261702E Datasheet - Infineon

PTFA261702E Thermally-Enhanced High Power RF LDMOS FET

PTFA261702E Features

* include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation

PTFA261702E-Infineon.pdf

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Datasheet Details

Part number:

PTFA261702E

Manufacturer:

Infineon ↗

File Size:

359.92 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFA261702E PTFA261702E Thermally-Enhanced High Power LDMOS FET Infineon

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