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PTFA261702E Thermally-Enhanced High Power RF LDMOS FET

PTFA261702E Description

PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 * 2700 MHz .
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

PTFA261702E Features

* include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFA261702E-like datasheet