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IDT10S60C 2nd Generation thinQ SiC Schottky Diode

IDT10S60C Description

www.DataSheet4U.com IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode .
and charts stated herein.

IDT10S60C Features

* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery/ No forward recovery
* No temperature influence on the switching behavior
* High surge current capability
* Pb-free lead plating; RoHs complia

IDT10S60C Applications

* Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 24 10 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like:
* CCM PFC
* Motor Drives Type IDT10S60C Package PG-TO220-2-2 Marking I F=5 A, T j=25 °C D10S60C Pin 1 C Pin

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2nd Generation thinQ SiC Schottky Diode Infineon Technologies
Infineon Technologies IDT10S60C-like datasheet