Datasheet Details
- Part number
- IPB026N06N
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 541.19 KB
- Datasheet
- IPB026N06N-InfineonTechnologies.pdf
- Description
- Power-Transistor
IPB026N06N Description
Type OptiMOSTM Power-Transistor .
IPB026N06N Features
* Optimized for synchronous rectification
* 100% avalanche tested
* Superior thermal resistance
* N-channel, normal level
IPB026N06N Applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID Qoss Qg(0V. .10V)
IPB026N06N
60 V 2.6 mW 100 A 65 nC 56 nC
PG-TO263-3
Type IPB026N06N
Package PG-TO263-3
Marking 026N06N
Maximum ratings, at T j=25 °C, unless oth
📁 Related Datasheet
📌 All Tags